New graphene transistors could offer new high-frequency devices
نویسندگان
چکیده
منابع مشابه
High-frequency self-aligned graphene transistors with transferred gate stacks.
Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on ...
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ژورنال
عنوان ژورنال: Materials Today
سال: 2014
ISSN: 1369-7021
DOI: 10.1016/j.mattod.2014.10.015